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Document Number: 94631

6

Revision: 17-May-10

VSKT71.., VSKH71.., VSKL71.., VSKN71.. Series

Vishay Semiconductors

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 75 A

Fig. 10 - On-State Voltage Drop Characteristics

Fig. 12 - Gate Characteristics

Instantaneous on-state voltage (V)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

1

10

100

1000

Tj = 25°C

Tj = 125°C

Per leg

Square wave pulse duration (s)

0.001

0.01

0.1

1

10

0.01

0.1

1

Steady state value

RthJC = 0.29 °C/W

(DC operation)

Per leg

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

(b)

(a)

Rec tangular ga te pulse

(4)

(3) (2)

(1)

a)Recommended load line for

b)Recommended load line for

VGD

IGD

Frequenc y Limited by PG(AV)

(1) PGM = 200 W, tp = 300 µs

(2) PGM = 60 W, tp = 1 ms

(3) PGM = 30 W, tp = 2 ms

(4) PGM = 12 W, tp = 5 ms

<= 30%rated di/ dt: 15 V, 40 ohms

tr = 1 µs, tp >= 6 µs

ra ted di/ d t: 20 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs

IRK.71../ .91.. Series

Instantaneous gate current (A)

VSK.71