VSKU105-08 datasheet(2/9 Pages) VISHAY

Part #	VSKU105-08

Description	ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 105 A

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Manufacturer	VISHAY [Vishay Siliconix]

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For technical questions within your region, please contact one of the following:

Document Number: 94656

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 17-May-10

VSKU105.., VSKV105.. Series

Vishay Semiconductors

ADD-A-PAK Generation VII

Power Modules Thyristor/Thyristor, 105 A

ELECTRICAL SPECIFICATIONS

Notes

(1) I2t for time tx = I2

√t x √tx

(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2

(3) 16.7 % x

π x IAV < I < π x IAV

(4) I >

π x IAV

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

V

VRSM, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

VDRM, MAXIMUM REPETITIVE

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

IRRM, IDRM

AT 130 °C

mA

VSK.105

04

400

500

400

15

08

800

900

800

12

1200

1300

1200

16

1600

1700

1600

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

IT(AV)

180° conduction, half sine wave,

TC = 85 °C

105

A

Maximum continuous RMS on-state current

IT(RMS)

DC

165

TC

78

°C

Maximum peak, one-cycle non-repetitive

on-state current

ITSM

t = 10 ms

No voltage

reapplied

Sinusoidal

half wave,

initial TJ =

TJ maximum

2000

A

t = 8.3 ms

2094

t = 10 ms

100 % VRRM

reapplied

1682

t = 8.3 ms

1760

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

Initial TJ =

TJ maximum

20

kA2s

t = 8.3 ms

18.26

t = 10 ms

100 % VRRM

reapplied

14.14

t = 8.3 ms

12.91

Maximum I2

√t for fusing

I2

√t (1)

t = 0.1 ms to 10 ms, no voltage reapplied

TJ = TJ maximum

200

kA2

√s

Maximum value of threshold voltage

VT(TO) (2)

Low level (3)

TJ = TJ maximum

0.98

V

High level (4)

1.12

Maximum value of on-state

slope resistance

rt (2)

Low level (3)

TJ = TJ maximum

2.7

m

Ω

High level (4)

2.34

Maximum on-state voltage drop

VTM

ITM =

π x IT(AV)

TJ = 25 °C

1.8

V

Maximum non-repetitive rate of rise of

turned on current

dI/dt

TJ = 25 °C, from 0.67 VDRM,

ITM =

π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

150

A/μs

Maximum holding current

IH

TJ = 25 °C, anode supply = 6 V,

resistive load, gate open circuit

250

mA

Maximum latching current

IL

TJ = 25 °C, anode supply = 6 V, resistive load

400

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