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VSKT250-20 Datasheet(PDF) 3 Page - Vishay Siliconix |
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VSKT250-20 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 94417 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A Vishay Semiconductors SWITCHING PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS Typical delay time td TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM 1.0 μs Typical rise time tr 2.0 Typical turn-off time tq ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 50 to 150 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum 50 60 mA RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 10.0 W Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 A Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 V Maximum required DC gate voltage to trigger VGT TJ = - 40 °C Anode supply = 12 V, resistive load; Ra = 1 4.0 TJ = 25 °C 3.0 TJ = TJ maximum 2.0 Maximum required DC gate current to trigger IGT TJ = - 40 °C Anode supply = 12 V, resistive load; Ra = 1 350 mA TJ = 25 °C 200 TJ = TJ maximum 100 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS Junction operating and storage temperature range TJ, TStg - 40 to 130 °C Maximum thermal resistance, junction to case per junction RthJC DC operation 0.17 0.125 K/W Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 0.02 Mounting torque ± 10 % MAP to heatsink A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 Nm busbar to MAP Approximate weight 500 g 17.8 oz. Case style MAGN-A-PAK |
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