VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3

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Vishay General Semiconductor

Revision: 11-Sep-13

1

Document Number: 89169

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA



Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum













PRIMARY CHARACTERISTICS

30 A

80 V

200 A

0.73 V

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variations

Single die

TO-220AB

1

2

3

1

K

2

3

TO-263AB

NC

A

K

TO-262AA

TMBS

®

ITO-220AB

1

2

3

VT3080S

VFT3080S

VIT3080S

VBT3080S

NC

A

K

HEATSINK

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

PARAMETER

SYMBOL

VT3080S

VFT3080S

VBT3080S

VIT3080S

UNIT

Maximum repetitive peak reverse voltage

80

V

Maximum average forward rectified current (fig. 1)

30

A

Peak forward surge current 8.3 ms single half



sine-wave superimposed on rated load

200

A

250

mJ

1.0

A

Isolation voltage (ITO-220AB only)



from terminal to heatsink t = 1 min

1500

V

Operating junction and storage temperature range

-55 to +150

°C