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10A8 Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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10A8 Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor 1 D-95, Sector 63, Noida sales@nainasemi.com Silicon Rectifier, Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V • Polarity: Color Band denotes Cathode • Lead free finish Thermal and Mechanical Specifications (TA specified) Parameters Symbol Maximum operating junction temperature range Maximum storage temperature range T Typical thermal resistance junction to ambient R Approximate weight Electrical Characteristics (TA = 25 0C unless otherwise specified Parameter Symbol Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage Maximum average forward output current @ TA = 50 0C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load Maximum DC forward voltage drop per element @ 10 A Typical junction capacitance Maximum DC reverse current at rated DC blocking voltage TA = 25 0C TA = 100 0C emiconductor Ltd. 10A05 Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com Silicon Rectifier, 10.0A High current capability & low forward voltage drop Plastic material carrying UL recognition 94V-0 JEDEC R A = 25 0C unless otherwise Symbol Values Units TJ - 55 to + 125 0C TStg - 55 to + 150 0C RθJA 10 0C/W W 2.1 g C unless otherwise specified) Symbol 10A05 10A1 10A2 10A4 10A6 10A8 VRRM 50 100 200 400 600 VRMS 35 70 140 280 420 VDC 50 100 200 400 600 IF(AV) 10 IFSM 600 VF 1.0 CJ 150 IR 10 100 A05 - 10A10 4205450 • Fax: 0120-4273653 JEDEC R-6 10A8 10A10 Units 800 1000 V 560 700 V 800 1000 V A A V pF µA |
Similar Part No. - 10A8 |
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