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BCR555 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BCR555 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page Semiconductor Group 2 Nov-27-1996 BCR 555 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CBO 50 - - Collector cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA Emitter cutoff current VEB = 5 V, IC = 0 IEBO - - 0.65 mA DC current gain IC = 50 mA, VCE = 5 V hFE 70 - - - Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA VCEsat - - 0.3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0.4 - 1 Input on Voltage IC = 10 mA, VCE = 0.3 V Vi(on) 0.5 - 1.4 Input resistor R1 1.5 2.2 2.9 k Ω Resistor ratio R1/R2 0.19 0.22 0.24 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT - 150 - MHz 1) Pulse test: t < 300 µs; D < 2% |
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