PSMN1R0-30YLC

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Product data sheet

Rev. 4 — 4 July 2011

8 of 15

NXP Semiconductors

PSMN1R0-30YLC

N-channel 30 V 1.15 m

Ω logic level MOSFET in LFPAK using

Fig 8.

Forward transconductance as a function of

drain current; typical values

Fig 9.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source threshold voltage as a function of

junction temperature

003a a e 949

0

60

120

180

240

300

0

25

50

75

100

(S )

003a a e 951

0

25

50

75

100

01

23

4

(A)

003a a e 948

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

01

23

(A)

Min

Typ

Max

003a a e 947

0

1

2

3

-60

0

60

120

180

(V)

Min (5mA)

1mA

Max (1mA)