PSMN1R7-25YLC datasheet(2/15 Pages) PHILIPS

Part #	PSMN1R7-25YLC

Description	N-channel 25 V 1.9 m廓 logic level MOSFET in LFPAK using NextPower technology

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PSMN1R7-25YLC

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Product data sheet

Rev. 01 — 2 May 2011

2 of 15

NXP Semiconductors

PSMN1R7-25YLC

N-channel 25 V 1.9 m

Ω logic level MOSFET in LFPAK using NextPower

[1]

Continuous current is limited by package

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

% = placeholder for manufacturing site code

Dynamic characteristics

QGD

gate-drain charge

VGS = 4.5 V; ID =25 A;

VDS =12V; see Figure 14;

see Figure 15

-7.8

-nC

QG(tot)

total gate charge

-

28

-

nC

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1S

source

SOT669 (LFPAK; Power-SO8)

2S

source

3S

source

4

G

gate

mb

D

mounting base; connected to drain

mb

1234

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN1R7-25YLC

LFPAK; Power-SO8

plastic single-ended surface-mounted package; 4 leads

SOT669

Table 4.

Marking codes

Type number

Marking code[1]

PSMN1R7-25YLC

1C725L

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PSMN1R7-25YLC Datasheet(PDF) 2 Page - NXP Semiconductors

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