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PSMN016-100YS Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN016-100YS Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page PSMN016-100YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 27 September 2011 4 of 15 NXP Semiconductors PSMN016-100YS N-channel 100 V 16.3 m Ω standard level MOSFET in LFPAK Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aad881 10 -1 1 10 10 2 10 3 1 10 10 2 10 3 VDS(V) ID (A) DC Limit RDSon = VDS / ID 100 ms 10 ms 1 ms 100 μs tp = 10 μs |
Similar Part No. - PSMN016-100YS_11 |
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Similar Description - PSMN016-100YS_11 |
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