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PSMN030-60YS Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN030-60YS Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page PSMN030-60YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 25 October 2010 8 of 15 NXP Semiconductors PSMN030-60YS N-channel LFPAK 60 V 24.7 m Ω standard level MOSFET Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values. Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. 003aae124 10 20 30 40 50 4 8 12 16 20 VGS(V) RDSon (m Ω) 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max Tj (°C) −60 180 120 060 003aad280 2 3 1 4 5 VGS(th) (V) 0 max typ min 003aad696 0 0.4 0.8 1.2 1.6 2 2.4 -60 0 60 120 180 Tj ( °C) a |
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