PSMN030-60YS

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Product data sheet

Rev. 02 — 25 October 2010

8 of 15

NXP Semiconductors

PSMN030-60YS

N-channel LFPAK 60 V 24.7 m

Ω standard level MOSFET

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature.

003aae124

10

20

30

40

50

4

8

12

16

20

(m

Ω)

03aa35

06

4

2

(A)

min

typ

max

−60

180

120

060

003aad280

2

3

1

4

5

(V)

0

max

typ

min

003aad696

0

0.4

0.8

1.2

1.6

2

2.4

-60

0

60

120

180

°C)

a