SWD3N80A datasheet(4/7 Pages) SEMIPOWER

Part #	SWD3N80A

Description	N-channel MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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4 / 7 page

Fig. 9. Maximum drain current vs.

case temperature.

Fig. 8. On resistance variation

vs. junction temperature

Fig. 10. Maximum safe operating area

Fig. 11. Transient thermal response curve

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

،ط Notes :

1. V

GS = 0 V

2. I

D = 250 ¥ىA

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

،ط Notes :

1. V

GS = 10 V

2. I

D = 1.5 A

T

J, Junction Temperature [

oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by R

DS(on)

،ط Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0

1

2

3

T

C'

Case Temperature [

o

C]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

،ط Notes :

1. Z

¥èJC(t) = 2.6 ،ة/W Max.

2. Duty Factor, D=t

1/t2

3. T

JM - TC = PDM * Z¥èJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Square Wave Pulse Duration [sec]

SW3N80A

SAMWIN

4/7

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SWD3N80A Datasheet(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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