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SWD3N80A Datasheet(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWD3N80A Datasheet(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
4 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Fig. 9. Maximum drain current vs. case temperature. Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area Fig. 11. Transient thermal response curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ،ط Notes : 1. V GS = 0 V 2. I D = 250 ¥ىA T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ،ط Notes : 1. V GS = 10 V 2. I D = 1.5 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 s Operation in This Area is Limited by R DS(on) ،ط Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 1 2 3 T C' Case Temperature [ o C] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ،ط Notes : 1. Z ¥èJC(t) = 2.6 ،ة/W Max. 2. Duty Factor, D=t 1/t2 3. T JM - TC = PDM * Z¥èJC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Square Wave Pulse Duration [sec] SW3N80A SAMWIN 4/7 |
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