BF2030W datasheet(2/2 Pages) SIEMENS

Part #	BF2030W

Description	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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BF 2030W

Semiconductor Group

Jun-05-1998

2

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Drain-source breakdown voltage

ID = 650 µA, -VG1S = 4 V, - VG2S = 4 V

V(BR)DS

-

V

12

Gate 1 - source breakdown voltage

+

IG1S = 10 mA, VG2S = 0 V, VDS = 0 V

+

V(BR)G1SS

-

8.5

Gate 2 - source breakdown voltage

±

IG2S = 10 mA, VG1S = VDS = 0

V

-

+

V(BR)G2SS

8.5

Gate 1 source current

VG1S = 5 V, VG2S = 0 V

50

+

IG1SS

-

nA

-

50

Gate 2 source leakage current

VG2S = 5 V, VG1S = 0 V, VDS = 0 V

-

+

IG2SS

Drain current

VDS = 5 V, VG1S = 0 V, VG2S = 4 V

-

µA

IDSS

-

Drain-source current

VDS = 5 V, VG2S = 4 V, RG1 = 20 kΩ

12

mA

-

IDSX

V

VG2S(p)

Gate 2-source pinch-off voltage

VDS = 5 V, ID = 20 µA

-

0.8

0.3

0.7

-

Gate 1-source pinch-off voltage

VDS = 5 V, VG2S = 4 V, ID = 20 µA

VG1S(p)

AC characteristics

Forward transconductance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

gfs

31

-

mS

2.5

-

Gate 1 input capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 1 MHz

Cg1ss

-

pF

1.1

-

Cdss

Output capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 1 MHz

Noise figure

VDS = 5 V, ID = 10 mA, f = 800 MHz

F

-

2

-

dB

Semiconductor Group

2

1998-11-01

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