SQ1420EEH datasheet(1/12 Pages) VISHAY

Part #	SQ1420EEH

Description	Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQ1420EEH

www.vishay.com

Vishay Siliconix

S11-2128 Rev. D, 31-Oct-11

1

Document Number: 65730

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedd

•100 % Rg Tested

• Typical ESD Protection: 800 V

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

60

RDS(on) () at VGS = 10 V

0.140

RDS(on) () at VGS = 4.5 V

0.200

ID (A)

1.6

Configuration

Single

Marking Code

9A

XX

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

N-Channel MOSFET

S

D

G

ORDERING INFORMATION

Package

SC-70

Lead (Pb)-free and Halogen-free

SQ1420EEH-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TC = 25 °C

ID

1.6

A

TC = 125 °C

1.6

Continuous Source Current (Diode Conduction)a

IS

1.6

Pulsed Drain Currentb

IDM

6.7

Maximum Power Dissipationb

TC = 25 °C

PD

3.3

W

TC = 125 °C

1.1

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

125

°C/W

Junction-to-Foot (Drain)

RthJF

45

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