TSOP-6 datasheet(1/11 Pages) VISHAY

Part #	TSOP-6

Description	Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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SQ3418EEV

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Vishay Siliconix

S11-2124-Rev. C, 07-Nov-11

1

Document Number: 65357

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• Typical ESD Protection 800 V

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

40

RDS(on) () at VGS = 10 V

0.032

RDS(on) () at VGS = 4.5 V

0.048

ID (A)

8

Configuration

Single

N-Channel MOSFET

(4) S

(1, 2, 5, 6) D

(3) G

TSOP-6

Top V iew

6

4

1

2

3

5

2.85 mm

3 mm

Marking Code: 8Bxxx

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and Halogen-free

SQ3418EEV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °Ca

ID

8

A

TC = 125 °C

5

Continuous Source Current (Diode Conduction)

IS

6

Pulsed Drain Currentb

IDM

32

Single Pulse Avalanche Current

L = 0.1 mH

IAS

5

Single Pulse Avalanche Energy

EAS

1.2

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

5

W

TC = 125 °C

1.6

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

110

°C/W

Junction-to-Foot (Drain)

RthJF

30

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