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VFT2045CBP Datasheet(PDF) 1 Page - Vishay Siliconix |
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VFT2045CBP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 89368 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 27-Oct-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A VFT2045CBP Vishay General Semiconductor New Product FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 45 V IFSM 160 A VF at IF = 10 A 0.41 V TOP max. 150 °C PIN 1 PIN 2 PIN 3 TMBS ® ITO-220AB 1 2 3 VFT2045CBP MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT2045CBP UNIT Maximum repetitive peak reverse voltage VRRM 45 V Maximum average forward rectified current (fig. 1) per device IF(AV) (1) 20 A per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 160 A Isolation voltage from termal to heatsink, t = 1 min VAC 1500 V Operating junction and storage temperature range TOP, TSTG - 40 to + 150 °C Junction temperature in DC forward current without reverse bias, t ≤ 1 h TJ (2) ≤ 200 °C |
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