Document Number: 89368

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Revision: 27-Oct-10

1

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

VFT2045CBP

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Notes

PRIMARY CHARACTERISTICS

2 x 10 A

45 V

160 A

0.41 V

150 °C

PIN 1

PIN 2

PIN 3

TMBS

®

ITO-220AB

1

2

3

VFT2045CBP

PARAMETER

SYMBOL

VFT2045CBP

UNIT

Maximum repetitive peak reverse voltage

45

V

Maximum average forward rectified current (fig. 1)

per device

20

A

per diode

10

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

160

A

Isolation voltage from termal to heatsink, t = 1 min

1500

V

Operating junction and storage temperature range

- 40 to + 150

°C

Junction temperature in DC forward current

without reverse bias, t

≤ 1 h

≤ 200

°C