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BQ24100 Datasheet(PDF) 4 Page - Texas Instruments |
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BQ24100 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 40 page  V IREG*PRE + 0.1V RSET2 1000, bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606O – JUNE 2004 – REVISED MARCH 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IOPRECHG Precharge range VI(BAT) < VLOWV, t < tPRECHG 15 200 mA V(ISET2) Precharge set voltage, ISET2 VI(BAT) < VLOWV, t < tPRECHG 100 mV K(ISET2) Precharge current set factor 1000 V/A 100 mV ≤ VIREG-PRE ≤ 100 mV, VIREG-PRE Voltage regulated across RSNS-Accuracy –20% 20% (PGM) Where 1.2 k Ω ≤ RSET2 ≤ 10 kΩ, Select RSET1 to program VIREG-PRE, VIREG-PRE (Measured) = IOPRE-CHG × RSNS (–20% to 20% excludes errors due to RSET1 and RSNS tolerances) CHARGE TERMINATION (CURRENT TAPER) DETECTION ITERM Charge current termination detection range VI(BAT) > VRCH 15 200 mA Charge termination detection set voltage, VTERM VI(BAT) > VRCH 100 mV ISET2 K(ISET2) Termination current set factor 1000 V/A Charger termination accuracy VI(BAT) > VRCH –20% 20% Both rising and falling, tdg-TERM Deglitch time for charge termination 20 30 40 ms 2-mV overdrive tRISE, tFALL = 100 ns TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR %LTF Cold temperature threshold, TS, % of bias VLTF = VO(VTSB) × % LTF/100 72.8% 73.5% 74.2% %HTF Hot temperature threshold, TS, % of bias VHTF = VO(VTSB) × % HTF/100 33.7% 34.4% 35.1% Cutoff temperature threshold, TS, % of %TCO VTCO = VO(VTSB) × % TCO/100 28.7% 29.3% 29.9% bias LTF hysteresis 0.5% 1% 1.5% Deglitch time for temperature fault, TS 20 30 40 Both rising and falling, tdg-TS ms Deglitch time for temperature fault, TS, 2-mV overdrive tRISE, tFALL = 100 ns 500 bq24109, bq24104 VCC > VIN(min), VO(VTSB) TS bias output voltage 3.15 V I(VTSB) = 10 mA 0.1 mF ≤ CO(VTSB) ≤ 1 mF VCC > IN(min), VO(VTSB) TS bias voltage regulation accuracy –10% 10% I(VTSB) = 10 mA 0.1 mF ≤ CO(VTSB) ≤ 1 mF BATTERY RECHARGE THRESHOLD VRCH Recharge threshold voltage Below VOREG 75 100 125 mV/cell VI(BAT) < decreasing below threshold, tdg-RCH Deglitch time 20 30 40 ms tFALL = 100 ns 10-mV overdrive STAT1, STAT2, AND PG OUTPUTS VOL(STATx) Low-level output saturation voltage, STATx IO = 5 mA 0.5 V VOL(PG) Low-level output saturation voltage, PG IO = 10 mA 0.1 CE CMODE, CELLS INPUTS VIL Low-level input voltage IIL = 5 mA 0 0.4 V VIH High-level input voltage IIH = 20 mA 1.3 VCC TTC INPUT tPRECHG Precharge timer 1440 1800 2160 s tCHARGE Programmable charge timer range t(CHG) = C(TTC) × K(TTC) 25 572 minutes Charge timer accuracy 0.01 mF ≤ C(TTC) ≤ 0.18 mF -10% 10% KTTC Timer multiplier 2.6 min/nF CTTC Charge time capacitor range 0.01 0.22 mF VTTC_EN TTC enable threshold voltage V(TTC) rising 200 mV 4 Submit Documentation Feedback Copyright © 2004–2010, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 |
Similar Part No. - BQ24100_10 |
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Similar Description - BQ24100_10 |
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