BF543 datasheet(5/5 Pages) SIEMENS

Part #	BF543

Description	Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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BF 543

Gate 1 transconductance y21s

VDS = 10 V, IDSS = 4 mA, VGS = 0

(source circuit)

Output admittance y22s

VDS = 10 V, IDSS = 10 mA, VGS = 0

(source circuit)

Test circuit for power gain Gp and noise figure F

f= 200 MHz, GG = 2 mS, GL = 0.5 mS

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