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DB3RI Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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DB3RI Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 3 page DB3-DB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Electrical Characteristics Min. Typ. Max. Break-over Voltage Symmetry C= 22nF + / -VBO Max. Break-over Current C= 22nF IBO Max. Dynamic Breakover Voltage IBO to IF=10mA ΔV Min. VB= IB Max. Output Voltage VO Min. Tape & Reel specification μA 100 Symbol V Units + / - 2 28 30 Item Symbol Dimension(mm) Leakage Current 10 V 5 μA *see diagram 1 Overall width A 64+1.69/-0.69 Tape spacing B 52.0+/-0.69 Component Pitch C 5.08+/-0.40 Untaped lead L1-L2 +/-0.69 Bent K 1.2 Max Tape Mismatch E 0.55(MAX) Glass offset F 0.69(MAX) Taped lead G 3.2Min lead beyond tape H 0 Reel outside diameter D 260+/-3 Type Number 0.5VBO (MAX) DB3TG DB3 + / - 3 Break-over Voltage 15 34 Reel width W1 72+3/-1 Reel inner diameter D1 48+/-1 Feed hole width D2 20+/-0.5 59 V C= 22nF VBO V 32 32 36 E L2 L1 F G H B A C K W1 D1 D2 D Version : D10 |
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