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DB3RI Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # DB3RI
Description  150mW Bi-directional Trigger Diode
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

DB3RI Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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DB3-DB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Electrical Characteristics
Min.
Typ.
Max.
Break-over Voltage Symmetry
C=
22nF
+ / -VBO
Max.
Break-over Current
C=
22nF
IBO
Max.
Dynamic Breakover Voltage
IBO to IF=10mA
ΔV
Min.
VB=
IB
Max.
Output Voltage
VO
Min.
Tape & Reel specification
μA
100
Symbol
V
Units
+ / - 2
28
30
Item
Symbol
Dimension(mm)
Leakage Current
10
V
5
μA
*see diagram 1
Overall width
A
64+1.69/-0.69
Tape spacing
B
52.0+/-0.69
Component Pitch
C
5.08+/-0.40
Untaped lead
L1-L2
+/-0.69
Bent
K
1.2 Max
Tape Mismatch
E
0.55(MAX)
Glass offset
F
0.69(MAX)
Taped lead
G
3.2Min
lead beyond tape
H
0
Reel outside diameter
D
260+/-3
Type Number
0.5VBO (MAX)
DB3TG
DB3
+ / - 3
Break-over Voltage
15
34
Reel width
W1
72+3/-1
Reel inner diameter
D1
48+/-1
Feed hole width
D2
20+/-0.5
59
V
C=
22nF
VBO
V
32
32
36
E
L2
L1
F
G
H
B
A
C
K
W1
D1
D2
D
Version : D10


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