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BZY55C30 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BZY55C30 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page BZY55C2V4~BZY55C36 500mW,5% Tolerance SMD Zener Diode Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Case :0805 standard package, molded plastic Min Max Min Max 1.80 2.20 0.071 0.086 1.05 1.45 0.041 0.057 0.25 0.65 0.010 0.026 0.75 0.95 0.030 0.037 Package code Package Packing RYG 0805 5K / 7" Reel Maximum Ratings Notes:1. Valid provided that electrodes are kept at ambient temperature VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM °C/W °C 0805 Dimensions A B V Unit (inch) C D Zener I vs. V Characteristics TJ, TSTG Ordering Information Rating at 25°C ambient temperature unless otherwise specified. Pin Configutation Suggested PAD Layout Thermal Resistance (Junction to Ambient) (Note 1) RθJA Units PD mW Type Number Power Dissipation Symbol -55 to + 150 Value 500 Junction and Storage Temperature Range VF 300 1.5 Maximum Ratings and Electrical Characteristics Features Mechanical Data Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Unit (mm) Wide zener voltage range selection : 2.4V to 36V High temperature soldering guaranteed:260°C/10s Polarity : Indicated by cathode band Halogen free IF=10mA BZY55C2V4~BZY55C36 Weight :0.006 gram (approximately) Part No. Forward Voltage Voltage Current IF VF VR IR VBR IZK VZ IZT VZM IZM Forward Region Leakage Region BreakdownRegion Small Signal Diode B A C D mm inch Unit : 1.40 0.055 1.20 0.047 1.10 0.043 0.133 3.40 Version : B11 |
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