TSM13N50

500V N-Channel Power MOSFET

1/8

Version: B10

ITO-220

PRODUCT SUMMARY

500

6.5

General Description

The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

●

(Typ.)

●

Low gate charge typical @ 36nC (Typ.)

●

Low Crss typical @ 23pF (Typ.)

●

Fast Switching

Ordering Information

Part No.

Package

Packing

TSM13N50CI C0

ITO-220

50pcs / Tube

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Tc = 25ºC

13

A

Tc = 100ºC

8.2

A

Pulsed Drain Current *

52

A

Avalanche Current (Single) (Note 2)

13

A

Single Pulse Avalanche Energy (Note 2)

751

mJ

Avalanche Current (Repetitive) (Note 1)

13

A

Repetitive Avalanche Energy (Note 1)

19.5

mJ

40

W

Operating Junction Temperature

150

ºC

Storage Temperature Range

-55 to +150

* Limited by maximum junction temperature

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

3.12

Thermal Resistance - Junction to Ambient

62.5

Notes: Surface mounted on FR4 board t ≤ 10sec

Block Diagram

N-Channel MOSFET

Pin Definition:

1. Gate

2. Drain

3. Source