BFG19S datasheet(2/6 Pages) SIEMENS

Part #	BFG19S

Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 6 page

Semiconductor Group

2

Dec-13-1996

BFG 19S

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

15

-

V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

ICES

-

100

µA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICBO

-

100

nA

Emitter-base cutoff current

VEB = 2 V, IC = 0

IEBO

-

10

µA

DC current gain

IC = 70 mA, VCE = 8 V

hFE

40

100

220

-

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BFG19S Datasheet(PDF) 2 Page - Siemens Semiconductor Group

BFG19S Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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