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1SS389 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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1SS389 Datasheet(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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1 / 1 page  SCHOTTKY BARRIER DIODE FEATURES High Speed High Reliability Small Package Low Forward Voltage APPLICATIONS High Speed Switching MARKING: S4 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 10 V IO Continuous Forward Current 100 mA IFM Peak Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current @10ms 1 A PD Power Dissipation 150 mW RθJA Thermal Resistance From Junction To Ambient 667 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=100μA 10 V Reverse current IR VR=10V 20 μA IF=1mA 0.18 IF=5mA 0.3 Forward voltage VF IF=100mA 0.5 V Total capacitance Ctot VR=0V,f=1MHz 40 pF SOD-523 1SS389 １ Ｄａｔｅ：２０１１／０５ www.htsemi.com semiconductor JinYu |
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