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Q62702-F1246 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # Q62702-F1246
Description  NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q62702-F1246 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
BFN 36
BFN 38
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
BFN 36
BFN 38
DC current gain1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
BFN 36
IC = 30 mA, VCE = 10 V
BFN 38
V
VCEsat
0.4
0.5
Base-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat
0.9
MHz
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
fT
–70
AC characteristics
V
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BFN 36
BFN 38
V(BR)CE0
250
300
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA, IB = 0
BFN 36
BFN 38
V(BR)CB0
250
300
Emitter-base breakdown voltage
IE = 100
µA, IB = 0
V(BR)EB0
5––
nA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEB0
100
nA
nA
µA
µA
Collector-base cutoff current
VCB = 200 V
BFN 36
VCB = 250 V
BFN 38
VCB = 200 V, TA = 150 ˚C
BFN 36
VCB = 250 V, TA = 150 ˚C
BFN 38
ICB0
100
100
20
20
hFE
25
40
40
30
pF
Output capacitance
VCB = 30 V, f = 1 MHz
Cobo
1.5
1)
Pulse test conditions: t
300 µs, D = 2 %.


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