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Q62702-F1305 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-F1305 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 PNP Silicon High-Voltage Transistors BFN 37 BFN 39 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BFN 37 BFN 39 Q62702-F1304 Q62702-F1305 BFN 37 BFN 39 SOT-223 1 2 3 4 B C E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol BFN 37 Unit Collector-emitter voltage VCE0 250 V Collector-base voltage VCB0 250 Emitter-base voltage VEB0 Collector current IC mA Base current IB Total power dissipation, TS = 124 ˚C Ptot W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 72 K/W Peak collector current ICM Peak base current IBM BFN 39 300 300 200 100 1.5 150 500 200 Values 5 Junction - soldering point Rth JS ≤ 17 q Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BFN 36, BFN 38 (NPN) 5.91 |
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