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2SD874 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part # 2SD874
Description  TRANSISTOR (NPN)
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Manufacturer  HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
Direct Link  http://www.htsemi.com
Logo HTSEMI - Shenzhen Jin Yu Semiconductor Co., Ltd.

2SD874 Datasheet(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

  2SD874 Datasheet HTML 1Page - Shenzhen Jin Yu Semiconductor Co., Ltd.  
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SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
TRANSISTOR (NPN)
FEATURES
Low Collector-Emitter Saturation Voltage
Large Collector Power Dissipation
Mini Power Type Package
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=2mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
µA
hFE(1)
VCE=10V, IC=500mA
85
340
DC current gain
hFE(2)
VCE=5V, IC=1A
50
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
1.2
V
Transition frequency
fT
VCE=10V,IC=50mA, f=200MHz
200
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
20
pF
CLASSIFICATION OF hFE（1）
RANK
Q
R
S
RANGE
85–170
120–240
170–340
MARKING
ZQ
ZR
ZS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
500
mW
RθJA
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
１　
www.htsemi.com
semiconductor
JinYu
2SD874


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