2SK3018 datasheet(1/4 Pages) HTSEMI

Part #	2SK3018

Description	N-Channel Enhancement Mode MOSFET

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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2SK3018

• Features

• External dimensions

1)

Low on-resistance.

2)

Fast switching speed.

3)

Low voltage drive (2.5V) makes this

device ideal for portable equipment.

4)

Easily designed drive circuits.

5)

Easy to parallel.

• Applications

Interfacing, switching (30V, 100mA)

• Structure

Silicon N-channel

MOSFET

①. Gate ②. Source ③. Drain

• Absolute maximum ratings (Ta = 25°C)

• Equivalent circuit

Parameter

Symbol

Limits

Unit

Drain-source voltage

VDSS

30

V

Gate-source voltage

VGSS

20

V

Continuous

ID

100

mA

Drain current

Pulsed

IDP*1

200

mA

Continuous

IDR

100

mA

Reverse

drain

current

Pulsed

IDRP*1

200

mA

Total power dissipation(Tc=25°C)

PD*2

200

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

-55~+150

°C

*1Pw≤10µs,Duty Cycle≤50%

*2With each pin mounted on the recommended lands

①

②

③

Units:mm

①

②

③

SOT-23

SOT-323

*A protection diode is included between the

gate and the source terminals to protect the

diode against static electricity when the product

is in use. Use a protection circuit when the fixed

voltages are exceeded.

Gate

Drain

Source

*Gate

Protection

Diode

N-Channel Enhancement Mode MOSFET

１　

Ｄａｔｅ：２０１１／０５

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2SK3018 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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