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A42 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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A42 Datasheet(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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1 / 1 page  SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V ICBO VCB=200V,IE=0 0.25 µA VCE=200V,IB=0 0.25 µA Collector cut-off current ICEO VCE=300V,IB=0 5 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=10V, IC=1mA 60 hFE(2) VCE=10V, IC=10mA 80 250 DC current gain hFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency fT VCE=20V,IC=10mA, f=30MHz 50 MHz CLASSIFICATION OF hFE（2） RANK A B1 B2 C RANGE 80–100 100–150 150–200 200–250 MARKING A42 Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 500 mW RθJA Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ A42 １ Ｄａｔｅ：２０１１／０５ www.htsemi.com semiconductor JinYu |
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