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RU1H100S Datasheet(PDF) 2 Page - Ruichips Semiconductor Co., Ltd |
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RU1H100S Datasheet(HTML) 2 Page - Ruichips Semiconductor Co., Ltd |
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2 / 11 page  Copyright © Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 2 www.ruichips.com RU1H100 Electrical Characteristics (T A=25°C Unless Otherwise Noted) RU1H100 Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250 µA 100 V VDS= 100V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TJ=85°C 30 µA V GS(th) Gate Threshold Voltage VDS=VGS, IDS=250 µA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA RDS(ON) ③ Drain-Source On-state Resistance VGS= 10V, IDS=40A 11 14 m Ω Notes: ①Current limited by package. ② Limited by TJmax, IAS =40A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C ③Pulse test ; Pulse width ≤400 µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Diode Characteristics VSD ③ Diode Forward Voltage ISD=40A, VGS=0V 1.2 V trr Reverse Recovery Time 36 ns qrr Reverse Recovery Charge ISD=40A, dlSD/dt=100A/ µs 46 nC Dynamic Characteristics ④ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 Ω Ciss Input Capacitance 3450 Coss Output Capacitance 265 Crss Reverse Transfer Capacitance VGS=0V, VDS= 50V, Frequency=1.0MHz 148 pF td(ON) Turn-on Delay Time 19 tr Turn-on Rise Time 86 td(OFF) Turn-off Delay Time 55 tf Turn-off Fall Time VDD=50V,IDS= 40A, VGEN= 10V,RG=5.6 Ω 69 ns Gate Charge Characteristics ④ Qg Total Gate Charge 85 135 Qgs Gate-Source Charge 20 Qgd Gate-Drain Charge VDS=80V, VGS= 10V, IDS=40A 35 nC |
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