Q62702-F659 datasheet(3/10 Pages) SIEMENS

Part #	Q62702-F659

Description	NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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3 / 10 page

BFQ 29P

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

AC Characteristics

Unit

Values

Parameter

Symbol

min.

typ.

max.

Power gain

IC = 20 mA, VCE = 6 V, f = 800 MHz,

Z0 = 50

Ω, ZL = ZLopt

Gpe

–14

–

GHz

Transition frequency

IC = 3 mA, VCE = 6 V, f = 200 MHz

IC = 20 mA, VCE = 6 V, f = 200 MHz

fT

–

3.6

2.7

5

–

Collector-emitter capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Cce

–

0.28

–

Output capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Cobs

–

0.8

–

dB

Noise figure

IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75

Ω

IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50

Ω

F

–

0.9

1.5

1.2

–

pF

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Ccb

–

0.5

0.65

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Cibo

–

1.35

–

Transducer gain

IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50

Ω

I S21e I 2

–11

–

mV

Linear output voltage

two-tone intermodulation test

IC = 20 mA, VCE = 6 V, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50

Ω

Vo1 = Vo2 –

180

–

dBm

Third order intercept point

IC = 20 mA, VCE = 6 V, f = 800 MHz

IP3

–28

–

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