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KTD1304 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part No. KTD1304
Description  TRANSISTOR (NPN)
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Maker  HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
Homepage  http://www.htsemi.com
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FEATURES
·High emitter-base voltage
·low on resistance
MARKING: MAX
MAXIMUM RATINGS (TA=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current -Continuous
0.3
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA, IE=0
25
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
12
V
Collector cut-off current
ICBO
VCB=25 V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=12V, IC=0
0.1
μA
hFE(FOR)
VCE=2V, IC=4 mA
200
1000
DC current gain
hFE(REV)
VCE= 2V, IC= 4mA
20
Collector-emitter saturation voltage
VCE(sat)
IC= 100mA, IB=10 mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC= 100mA, IB=10mA
1
V
Transition frequency
fT
VCE=10V, IC= 1mA
f=100MHz
60
MHz
output capacitance
Cob
VCB=10V,IE=0,f=1MHz
10
pF
On resistance
R(on)
Vin=0.3V,IB=1mA,f=1KHZ
0.6
Ω
SOT-23
1. BASE
2. EMITTER
3.COLLECTOR
KTD1304
TRANSISTOR (NPN)
1 
Date:2011/05
www.htsemi.com
semiconductor
JinYu




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