MMBTA64 datasheet(1/1 Pages) HTSEMI

Part #	MMBTA64

Description	TRANSISTOR(PNP)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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TRANSISTOR(PNP)

FEATURES

 For Applications Requiring High Current Gain

MARKING:2V

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-10

V

IC

Collector Current

-800

mA

PC

Collector Power Dissipation

300

mW

RΘJA

Thermal Resistance From Junction To Ambient

416

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100µA, IE=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-10

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-10V, IC=0

-0.1

µA

hFE(1) *

VCE=-5V, IC=-10mA

10

K

DC current gain

hFE(2) *

VCE=-5V, IC=-100mA

20

K

Collector-emitter saturation voltage

VCE(sat) *

IC=-100mA, IB=-0.1mA

-1.5

V

Base-emitter voltage

VBE*

VCE=-5V, IC=-100mA

-2

V

Transition frequency

fT

VCE=-5V,IC=-10mA,

f=100MHz

125

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

MMBTA64

１　

Ｄａｔｅ：２０１１／０５

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