MMBZ5234BW datasheet(1/2 Pages) HTSEMI

Part #	MMBZ5234BW

Description	SILICON PLANAR ZENER DIODES

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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MMBZ5221BW~MMBZ5259BW

SILICON PLANAR ZENER DIODES

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Power Dissipation

PD

200

mW

Operating Junction and Storage Temperature Range

Tj ,TS

- 65 to + 150

O

C

Characteristics ( Ta = 25

O

C unless otherwise noted, VF < 0.9 V at IF = 10 mA)

Zener Voltage Range

1)

Dynamic Resistance

Reverse Leakage Current

VZnom

lZT for

VZT

ZZT

ZZK

at IZK

IR

at VR

Type

Marking

Code

V

mA

V

Max. (Ω)Max. (Ω)

mA

Max. (µA)

V

MMBZ5221BW

HA

2.4

20

2.28…2.52

30

1200

0.25

100

1

MMBZ5223BW

HB

2.7

20

2.57…2.84

30

1300

0.25

75

1

MMBZ5225BW

HC

3

20

2.85…3.15

30

1600

0.25

50

1

MMBZ5226BW

HD

3.3

20

3.14…3.47

28

1600

0.25

25

1

MMBZ5227BW

HE

3.6

20

3.42…3.78

24

1700

0.25

15

1

MMBZ5228BW

HF

3.9

20

3.71…4.1

23

1900

0.25

10

1

MMBZ5229BW

HH

4.3

20

4.09…4.52

22

2000

0.25

5

1

MMBZ5230BW

HJ

4.7

20

4.47…4.94

19

1900

0.25

5

2

MMBZ5231BW

HK

5.1

20

4.85…5.36

17

1600

0.25

5

2

MMBZ5232BW

HM

5.6

20

5.32…5.88

11

1600

0.25

5

3

MMBZ5234BW

HN

6.2

20

5.89…6.51

7

1000

0.25

5

4

MMBZ5235BW

HP

6.8

20

6.46…7.14

5

750

0.25

3

5

MMBZ5236BW

HR

7.5

20

7.13…7.88

6

500

0.25

3

6

MMBZ5237BW

HX

8.2

20

7.79…8.61

8

500

0.25

3

6.5

MMBZ5239BW

HY

9.1

20

8.65…9.56

10

600

0.25

3

7

MMBZ5240BW

HZ

10

20

9.5…10.5

17

600

0.25

3

8

MMBZ5241BW

JA

11

20

10.45…11.55

22

600

0.25

2

8.4

MMBZ5242BW

JB

12

20

11.4…12.6

30

600

0.25

1

9.1

MMBZ5243BW

JC

13

9.5

12.35…13.65

13

600

0.25

0.5

9.9

MMBZ5245BW

JD

15

8.5

14.25…15.75

16

600

0.25

0.1

11

MMBZ5246BW

JE

16

7.8

15.2…16.8

17

600

0.25

0.1

12

MMBZ5248BW

JF

18

7

17.1…18.9

21

600

0.25

0.1

14

MMBZ5250BW

JH

20

6.2

19…21

25

600

0.25

0.1

15

MMBZ5251BW

JJ

22

5.6

20.9…23.1

29

600

0.25

0.1

17

MMBZ5252BW

JK

24

5.2

22.8…25.2

33

600

0.25

0.1

18

MMBZ5254BW

JM

27

5

25.65…28.35

41

600

0.25

0.1

21

MMBZ5256BW

JN

30

4.2

28.5…31.5

49

600

0.25

0.1

23

MMBZ5257BW

JP

33

3.8

31.35…34.65

58

700

0.25

0.1

25

MMBZ5258BW

JR

36

3.4

34.2…37.8

70

700

0.25

0.1

27

MMBZ5259BW

JX

39

3.2

37.05…40.95

80

800

0.25

0.1

30

1) Tested with pulses tp = 20 ms.

1. Anode 3. Cathode

1

3

2

１　

Ｄａｔｅ：２０１１／０５

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MMBZ5234BW Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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