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KTD1898 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part No. KTD1898
Description  1A , 100V NPN Plastic Encapsulated Transistor
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Maker  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
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KTD1898
1A , 100V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
10-Nov-2011 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1
Base
3
Emitter
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
General Purpose Application
CLASSIFICATION OF hFE(1)
Product-Rank
KTD1898-O
KTD1898-Y
KTD1898-GR
Range
70~140
120~240
200~400
Marking
ZO
ZY
ZG
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current-Continuous
IC
1
A
Collector Power Dissipation
PC
500
mW
Maximum Junction to Ambient
RθJA
250
°C / W
Junction & Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
100
-
-
V
IC=0.1mA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
80
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
-
-
V
IE=0.1mA, IC=0
Collector Cut-Off Current
ICBO
-
-
-
0.1
µA
VCB=80V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA
VEB=4V, IC=0
DC Current Gain
hFE
70
-
400
VCE=3V, IC= 500mA
Collector-Emitter Saturation voltage
VCE(sat)
-
-
0.4
V
IC=500mA, IB=20mA
Transition Frequency
fT
-
100
-
MHz VCE=10V,IC=50mA,f=100MHz
Collector Output Capacitance
COB
-
20
-
pF
VCB=10V, IE=0, f=1MHz
Package
MPQ
Leader Size
SOT-89
1K
7 inch
SOT-89
A
E
C
D
B
K
H
F
G
L
J
1
2
3
4
B C
E
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
4.40
4.60
G
0.40
0.58
B
3.94
4.25
H
1.50
TYP
C
1.40
1.60
J
3.00
TYP
D
2.25
2.60
K
0.32
0.52
E
1.50
1.85
L
0.35
0.44
F
0.89
1.20




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