BGA 427

Semiconductor Group

Au -11-1998

1

Si-MMIC-Amplifier

VPS05605

4

2

1

3

Preliminary data

• Cascadable 50 Ω-gain block

• Unconditionally stable

• Gain |S

gain |

I

• Noise figure NF = 2.2 dB at 1.8 GHz

• typical device voltage V

• Reverse isolation < 35 dB (appl.2)

EHA07378

V

2

1

IN

OUT

+

4

3

GND

Circuit Diagram

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Package

Pin Configuration

Q62702-G0067

1, IN

BGA 427

2, GND

3, +V

4, Out

SOT-343

BMs

Maximum Ratings

Symbol

Value

Parameter

Unit

Device current

mA

25

Device voltage

6

V

150

mW

Total power dissipation,

dBm

-10

Junction temperature

150

°C

Ambient temperature

-65 ...+150

Storage temperature

-65 ...+150

Thermal Resistance

≤ tbd

K/W

Junction - soldering point

1)

1)

Semiconductor Group

1

1998-11-01