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Q62702-G0067 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-G0067 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 5 page BGA 427 Semiconductor Group Au -11-1998 1 in SIEGET® 25-Technologie Si-MMIC-Amplifier VPS05605 4 2 1 3 Preliminary data • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S 21| 2 = 18,5 dB at 1.8 GHz (appl.1) gain | S21|2 = 22 dB at 1.8 GHz (appl.2) I P3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz • typical device voltage V D = 2 V to 5 V • Reverse isolation < 35 dB (appl.2) EHA07378 V 2 1 IN OUT + 4 3 GND Circuit Diagram ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Package Pin Configuration Q62702-G0067 1, IN BGA 427 2, GND 3, +V 4, Out SOT-343 BMs Maximum Ratings Symbol Value Parameter Unit Device current ID mA 25 Device voltage 6 V VD,+V Ptot 150 mW Total power dissipation, TS ≤ tbd °C dBm RF input power PRFin -10 Junction temperature Tj 150 °C Ambient temperature -65 ...+150 TA Storage temperature Tstg -65 ...+150 Thermal Resistance ≤ tbd K/W Junction - soldering point 1) RthJS 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group 1 1998-11-01 |
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