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SMG2391P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SMG2391P
Description  -0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMG2391P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changes of specification will not be informed individually.
SMG2391P
-0.9A , -150V , RDS(ON) 1.2 Ω
Ω
Ω
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
27-Oct-2011 Rev. A
Page 1 of 4
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
SC-59
TOP VIEW
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Low RDS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-150
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
1
TA=25°C
ID
-0.9
A
TA=70°C
-0.8
Pulsed Drain Current
2
IDM
5
A
Power Dissipation
1
TA=25°C
PD
1.3
W
TA=70°C
0.8
Continuous Source Current (Diode Conduction)
1
IS
1.5
A
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
1
t<= 10sec
RθJA
100
°C / W
Steady State
166
Notes:
1.
Surface mounted on 1”x1” FR4 board.
2.
Pulse width limited by Max. junction temperature.
Package
MPQ
Leader Size
SC-59
3K
7 inch
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.70
3.10
G
0.10 REF.
B
2.25
3.00
H
0.40 REF.
C
1.30
1.70
J
0.10
0.20
D
1.00
1.40
K
0.45
0.55
E
1.70
2.30
L
0.85
1.15
F
0.35
0.50
1
2
3


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