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XP151A13COMR Datasheet(PDF) 3 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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XP151A13COMR Datasheet(HTML) 3 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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3 / 4 page  0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 0 2 4 6 8 10 012345 TC = 125_C –55 _C 0, 0.5, 1 V VGS = 5 thru 2.5 V 1.5 V 2 V 0 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 0 1 2 3 4 5 01234567 0 0.03 0.06 0.09 0.12 0.15 02468 10 Gate Charge Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 3.6 A ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A TJ – Junction Temperature (_C) VGS = 2.5 V VGS = 4.5 V 25 _C XP151A13COMR 20V N-Channel Enhancement Mode MOSFET ３ Ｄａｔｅ：２０１１／０５ www.htsemi.com semiconductor JinYu |
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