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BAS70-05-V Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAS70-05-V Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85702 Rev. 1.8, 05-Aug-10 BAS70-00-V to BAS70-06-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified 1) Pulse test; t p ≤ 300 μs Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 10 μA (pulsed) V(BR) 70 V Leakage current VR = 50 V IR 20 100 nA Forward voltage IF = 1.0 mA VF 410 mV Forward voltage1) IF = 15 mA, VF 1000 mV Diode capacitance VR = 0 V, f = 1 MHz CD 1.5 2 pF Reverse recovery time IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5ns 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) |
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