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BAS170WS-V Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAS170WS-V Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page www.vishay.com 2 Document Number 85653 Rev. 1.7, 05-Aug-10 BAS170WS-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Note: 1) Pulse test; t p ≤ 300 µs Package Dimensions in millimeters (inches): SOD-323 Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 70 V Leakage current VR = 50 V IR 0.1 µA VR = 70 V IR 10 µA Forward voltage IF = 1 mA VF 375 410 mV IF = 10 mA VF 705 750 mV Forward voltage1) IF = 15 mA VF 880 1000 mV Diode capacitance VR = 0 V, f = 1 MHz CD 1.5 2 pF Differential forward resistance IE = 5 mA, f = 10 kHz RF 34 Ω Foot print recommendation: Rev. 5 - Date: 23.Sept.2009 17443 Document no.:S8-V-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) Cathode bar 2.50 (0.098) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) Created - Date: 24.August.2004 0.40 (0.016) 0.25 (0.010) |
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