BAS170WS-V datasheet(2/3 Pages) VISHAY

Part #	BAS170WS-V

Description	Small Signal Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85653

Rev. 1.7, 05-Aug-10

BAS170WS-V

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Note:

1) Pulse test; t

p ≤ 300 µs

Package Dimensions in millimeters (inches): SOD-323

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

IR = 10 µA (pulsed)

V(BR)

70

V

Leakage current

VR = 50 V

IR

0.1

µA

VR = 70 V

IR

10

µA

Forward voltage

IF = 1 mA

VF

375

410

mV

IF = 10 mA

VF

705

750

mV

Forward voltage1)

IF = 15 mA

VF

880

1000

mV

Diode capacitance

VR = 0 V, f = 1 MHz

CD

1.5

2

pF

Differential forward resistance

IE = 5 mA, f = 10 kHz

RF

34

Ω

Foot print recommendation:

Rev. 5 - Date: 23.Sept.2009

17443

Document no.:S8-V-3910.02-001 (4)

0.6 (0.024)

1.6 (0.063)

Cathode bar

2.50 (0.098)

2.85 (0.112)

1.60 (0.063)

1.95 (0.077)

Created - Date: 24.August.2004

0.40 (0.016)

0.25 (0.010)

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