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Document Number 85504

Rev. 2.0, 09-Jun-10

BAS385

Vishay Semiconductors

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Electrical Characteristics

Typical Characteristics

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

240

mV

320

mV

400

mV

500

mV

800

mV

Reverse current

2.3

µA

Diode capacitance

10

pF

Figure 1. Max. Reverse Power Dissipation vs. Junction

Temperature

Figure 2. Reverse Current vs. Junction Temperature

0

20

40

60

80

100

120

140

160

180

200

25

50

75

100

125

150

T

15822

V

R

P

at 100 % V

R

P

at 80 % V

R

1

10

100

1000

25

50

75

100

125

150

15823

V

T

Figure 3. Forward Current vs. Forward Voltage

Figure 4. Diode Capacitance vs. Reverse Voltage

0

0.5

1.0

1.5

15824

0.1

1

10

100

1000

T

V

T

0

1

2

3

4

5

6

7

8

9

10

0.1

1

10

100

15825

f = 1 MHz

V