BFU725F-N1 datasheet(2/12 Pages) PHILIPS

Part #	BFU725F-N1

Description	NPN wideband silicon germanium RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BFU725F_N1

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Product data sheet

Rev. 2 — 3 November 2011

2 of 12

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

[1]

Tsp is the temperature at the solder point of the emitter lead.

[2]

Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).

2.

Pinning information

3.

Ordering information

4.

Marking

CCBS

collector-base

capacitance

VCB =2V; f=1MHz

-

70

-

fF

fT

transition frequency

IC =25mA; VCE =2V;

f= 2GHz; Tamb =25 C

-55

-

GHz

Gp(max)

maximum power gain

IC =25mA; VCE =2V;

f= 5.8GHz; Tamb =25 C

[2] -18

-

dB

NF

noise figure

IC =5mA; VCE =2V;

f= 5.8GHz;



S = opt;

Tamb =25 C

-0.7

-

dB

Table 1.

Quick reference data …continued

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Discrete pinning

Description

Simplified outline

Graphic symbol

1emitter

2base

3emitter

4

collector

1

2

34

mbb159

4

1, 3

2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BFU725F/N1

-

plastic surface-mounted flat pack package; reverse

pinning; 4 leads

SOT343F

Table 4.

Marking

Type number

Marking

Description

BFU725F/N1

B7*

* = p : made in Hong Kong

* = t : made in Malaysia

* = W : made in China

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