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150UR120D Datasheet(PDF) 2 Page - Vishay Siliconix

Part # 150UR120D
Description  Standard Recovery Diodes (Stud Version), 150 A
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

150UR120D Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: ind-modules@vishay.com
Document Number: 93490
2
Revision: 21-May-08
150U(R).. Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 150 A
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
150
A
125
°C
Maximum RMS forward current
IF(RMS)
DC at 110 °C
235
A
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
3000
t = 8.3 ms
3140
Maximum I2t for fusing
I2t
t = 10 ms
45
kA2s
t = 8.3 ms
41
Slope resistance
rf
TJ = TJ maximum
0.97
m
Ω
Threshold voltage
VF(T0)
0.80
V
Maximum forward voltage drop
VFM
Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave
1.47
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
- 40 to 180
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.3
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.1
Maximum allowed
mounting torque + 0 - 20 %
minimum
Not lubricated threads
17
N · m
maximum
Lubricated threads
14.5
Approximate weight
130
g
Case style
See dimensions - link at the end of datasheet
DO-205AA (DO-8)
ΔR
thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.031
0.023
TJ = TJ maximum
K/W
120°
0.038
0.040
90°
0.048
0.053
60°
0.071
0.075
30°
0.120
0.121


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