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150UR120D Datasheet(PDF) 2 Page - Vishay Siliconix |
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150UR120D Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93490 2 Revision: 21-May-08 150U(R).. Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 150 A Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 150 A 125 °C Maximum RMS forward current IF(RMS) DC at 110 °C 235 A Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 3000 t = 8.3 ms 3140 Maximum I2t for fusing I2t t = 10 ms 45 kA2s t = 8.3 ms 41 Slope resistance rf TJ = TJ maximum 0.97 m Ω Threshold voltage VF(T0) 0.80 V Maximum forward voltage drop VFM Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.47 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range TJ, TStg - 40 to 180 °C Maximum thermal resistance, junction to case RthJC DC operation 0.3 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 Maximum allowed mounting torque + 0 - 20 % minimum Not lubricated threads 17 N · m maximum Lubricated threads 14.5 Approximate weight 130 g Case style See dimensions - link at the end of datasheet DO-205AA (DO-8) ΔR thJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.031 0.023 TJ = TJ maximum K/W 120° 0.038 0.040 90° 0.048 0.053 60° 0.071 0.075 30° 0.120 0.121 |
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