BZD27C3V6P-M to BZD27C200P-M

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 29-Nov-11

1

Document Number: 83307

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Zener Diodes with Surge Current Specification

FEATURES

• Sillicon planar Zener diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering: 260 °C/10 s at

terminals

• AEC-Q101 qualified

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

Notes

 40 μm thick)

PRIMARY CHARACTERISTICS

PARAMETER

VALUE

UNIT

3.6 to 200

V

5 to 100

mA

Pulse current

Int. construction

Single

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZD27C3V6P-M to

BZD27C200P-M

BZD27C3V6P-M to

BZD27C200P-M-series-08

3000 per 7" reel (8mm tape)

15 000/box

BZD27C3V6P-M to

BZD27C200P-M

BZD27C3V6P-M to

BZD27C200P-M-series-18

10 000 per 13" reel (8 mm tape)

10 000/box

PACKAGE

PACKAGE NAME

WEIGHT

MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

SOLDERING

CONDITIONS

DO-219AB (SMF)

15 mg

UL 94 V-0

MSL level 1

(according J-STD-020)

260 °C/10 s at terminals

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Power dissipation

2300

mW

800

mW

Non repetitive peak surge power

100 μs square pulse

300

W

10/1000 μs waveform

(BZD27-C7V5P-M to BZD27-C100P-M)

150

W

10/1000 μs waveform

(BZD27-C110P-M to BZD27-C200P-M)

100

W

Junction to lead

30

K/W

Junction to ambient air

Mounted on epoxy-glass PCB with 3 mm x

3 mm Cu pads (

 40 μm thick)

180

K/W

Junction temperature

150

°C

Storage temperature range

- 55 to + 150

°C