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AZ23B5V1-V-G Datasheet(PDF) 1 Page - Vishay Siliconix |
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AZ23B5V1-V-G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page AZ23-V-G-Series www.vishay.com Vishay Semiconductors Rev. 1.2, 31-Aug-11 1 Document Number: 85867 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. V Z and Rzj of the two diodes in one case is 5 % • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.7 to 51 V Test current IZT 5mA VZ specification Pulse current Int. construction Dual 20456 2 3 1 ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY AZ23-V-G-series AZ23-V-G-series-18 10 000 (8 mm tape on 13" reel) 10 000 AZ23-V-G-series AZ23-V-G-series-08 3000 (8 mm tape on 7" reel) 15 000 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOT-23 8.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Zener current IZ Ptot/VZ mA |
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