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VESD03A1C-HD1 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VESD03A1C-HD1 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page VESD03A1C-HD1 Document Number 81797 Rev. 1.2, 02-Sep-08 Vishay Semiconductors www.vishay.com 1 20855 20856 2 1 For technical support, please contact: ESD-Protection@vishay.com ESD-Protection Diode in LLP1006-2L Features • Ultra compact LLP1006-2L package • Low package height < 0.4 mm • 1-line ESD-protection • Low leakage current < 1 µA • Low load capacitance CD = 46 pF (VR = 2.5 V; f = 1 MHz) • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • High surge current acc. IEC61000-4-5 IPP > 9.5 A • Soldering can be checked by standard vision inspection. No X-ray necessary • Lead (Pb)-free component • Pin plating NiPdAu (e4) no whisker growth • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Marking (example only) Bar = Cathode marking X = Date code Y = Type code (see table below) Ordering Information Package Data Absolute Maximum Ratings * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 21121 XY Device name Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity VESD03A1C-HD1 VESD03A1C-HD1-GS08 8000 8000 Device name Package name Type code Weight Molding compound flammability rating Moisture sensitivity level Soldering conditions VESD03A1C-HD1 LLP1006-2L E 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Rating Test conditions Symbol Value Unit Peak pulse current Acc. IEC 61000-4-5, tP = 8/20 µs/single shot IPPM 9.5 A Peak pulse power Acc. IEC 61000-4-5, tP = 8/20 µs/single shot PPP 95 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C |
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