2SC3834 datasheet(1/1 Pages) TGS

Part #	2SC3834

Description	Silicon NPN Triple Diffused Planar Transistor

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

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TO-220

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

200

V

Collector-Emitter Voltage

V

CEO

120

V

Emitter-Base Voltage

V

EBO

8.0

V

Collector Current

I

C

7.0

A

Base Current

I

B

3.0

A

Total Dissipation at

P

tot

50

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

2SC3834

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICBO

V

CB=200V, IE=0

0.1

mA

Emitter Cut-off Current

IEBO

V

EB=8V, IC=0

0.1

mA

Collector-Emitter Sustaining Voltage

VCEO

I

C=50mA, IB=0

120

V

DC Current Gain

hFE(1)

V

CE=4V, IC=0.3A

100

hFE(2)

V

CE=4V, IC=3.0A

70

220

Collector-Emitter Saturation Voltage

VCE(sat) I

C=3.0A,IB=300mA

0.5

V

Base-Emitter Saturation Voltage

VBE(sat) I

C=3.0A,IB=300mA

1.2

V

Current Gain Bandwidth Product

fT

V

CE=12V,IC=500mA

10

MHz

Silicon NPN Triple Diffused Planar Transistor

Product specification

It is intented for use in power

amplifier and switching applications.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD

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