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BSM181F Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BSM181F Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 7 page Semiconductor Group 69 Typ. capacitances C = f (V DS) parameter: V GS = 0, f = 1 MHz (spread) Forward characteristics of fast-recovery reverse diode I F = f (VSD) parameter: T j, tp = 80 µs (spread) Typ. reverse recovery charge Q rr = f (Tj) parameter: d i/dt = 100 A/ µs, I F = 34 A V R = 100 V BSM 181 F |
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