C67076-A2300-A70 datasheet(2/9 Pages) SIEMENS

Part #	C67076-A2300-A70

Description	IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 9 page

Semiconductor Group

2

Feb-14-1997

BSM 200 GB 120 DL

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 8 mA

VGE(th)

4.5

5.5

6.5

V

Collector-emitter saturation voltage

VGE = 15 V, IC = 200 A, Tj = 25 °C

VGE = 15 V, IC = 200 A, Tj = 125 °C

VCE(sat)

-

2.5

2.2

3

2.6

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

ICES

-

10

mA

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V

IGES

-

400

nA

AC Characteristics

Transconductance

VCE = 20 V, IC = 200 A

gfs

110

-

S

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Ciss

-

13

-

nF

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Coss

-

2

-

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Crss

-

1

-

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C67076-A2300-A70 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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