VS-8TQ...PbF Series, VS-8TQ...-N3 Series

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Vishay Semiconductors

Revision: 29-Aug-11

1

Document Number: 94265

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Schottky Rectifier, 8 A

FEATURES

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation

for

enhanced

mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

DESCRIPTION

The VS-8TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

Package

TO-220AC

8 A

60 V, 80 V, 100 V

0.58 V

7 mA at 125 °C

175 °C

Diode variation

Single die

7.5 mJ

Anode

1

3

Cathode

Base

cathode

2

TO-220AC

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

8A

Range

60 to 100

V

850

A

0.58

V

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-

8TQ060PbF

VS-

8TQ060-N3

VS-

8TQ080PbF

VS-

8TQ080-N3

VS-

8TQ100PbF

VS-

8TQ100-N3

UNITS

Maximum DC

reverse voltage

60

60

80

80

100

100

V

Maximum working

peak reverse

voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5

8A

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

850

A

10 ms sine or 6 ms rect. pulse

230

Non-repetitive avalanche energy

7.50

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs

0.50

A