VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3

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Vishay Semiconductors

Revision: 21-Sep-11

1

Document Number: 93206

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Schottky Rectifier, 1.1 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

• High

purity,

high

temperature

epoxy

encapsulation

for

enhanced

mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and

long term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

DESCRIPTION

The VS-11DQ... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

PRODUCT SUMMARY

Package

DO-204AL (DO-41)

1.1 A

50 V, 60 V

See Electrical table

11.0 mA at 125 °C

150 °C

Diode variation

Single die

2.0 mJ

Cathode

Anode

DO-204AL

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

1.1

A

50/60

V

150

A

0.53

V

Range

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-11DQ05

VS-11DQ05-M3

VS-11DQ06

VS-11DQ06-M3

UNITS

Maximum DC reverse voltage

50

50

60

60

V

Maximum working peak reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

1.1

A

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

Following any rated

load condition and with

150

10 ms sine or 6 ms rect. pulse

25

Non-repetitive avalanche energy

2.0

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs

1.0

A