VS-21DQ06, VS-21DQ06-M3

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Vishay Semiconductors

Revision: 21-Sep-11

2

Document Number: 93280

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Note

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

Maximum forward voltage drop

2 A

0.53

0.60

V

4 A

0.67

0.75

2 A

0.49

0.55

4 A

0.61

0.67

Maximum reverse leakage current

0.02

0.50

mA

7.0

10

Typical junction capacitance

120

pF

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

nH

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to ambient

DC operation

Without cooling fin

100

°C/W

Typical thermal resistance,

junction to lead

DC operation

See fig. 4

25

Approximate weight

0.33

g

0.012

oz.

Marking device

Case style DO-204AL (D-41)

21DQ06

dP

tot

dT

J

-------------

1

R

thJA

--------------

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